TIP122FP tip127fp complementary silicon power darlington transistors n stmicroelectronics preferred salestypes n fully molded isolated package n 2000 v dc isolation (u.l. compliant) description the TIP122FP is a silicon epitaxial-base npn power transistor in monolithic darlington configuration mounted in jedec to-220fp fully molded isolated package. it is intented for use in power linear and switching applications. the complementary pnp type is tip127fp. internal schematic diagram july 2000 absolute maximum ratings symbol parameter value unit npn TIP122FP pnp tip127fp v cbo collector-base voltage (i e = 0) 100 v v ceo collector-emitter voltage (i b = 0) 100 v v ebo emitter-base voltage (i c =0) 5 v i c collector current 5 a i cm collector peak current 8 a i b base current 0.1 a p tot total dissipation at t case 25 o c t amb 25 o c 29 2 w w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c for pnp types voltage and current values are negative. 1 2 3 to-220fp r 1 typ. = 5 k w r 2 typ. = 150 w ? 1/6
thermal data r thj-case r t hj- amb thermal resistance junction-case max thermal resistance junction-ambient max 4.3 62.5 o c/w o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ceo collector cut-off current (i b =0) v ce =50v 0.5 ma i cbo collector cut-off current (i b =0) v cb =100v 0.2 ma i ebo emitter cut-off current (i c =0) v eb =5v 2 ma v ceo(sus) * collector-emitter sustaining voltage (i b =0) i c = 30 ma 100 v v ce(s at) * collector-emitter saturation voltage i c =3a i b =12ma i c =5a i b =20ma 2 4 v v v be(on) * base-emitter voltage i c =3a v ce =3v 2.5 v h fe * dc current gain i c =0.5a v ce =3v i c =3a v ce =3v 1000 1000 * pulsed: pulse duration = 300 m s, duty cycle 1.5 %. for pnp types voltage and current values are negative. safe operating area derating curve TIP122FP / tip127fp 2/6
dc current gain (npn type) collector emitter saturation voltage (npn type) base emitter saturation voltage (npn type) dc current gain (pnp type) collector emitter saturation voltage (pnp type) base emitter saturation voltage (pnp type) TIP122FP / tip127fp 3/6
base emitter on voltage (npn type) freewheel diode forward voltage (npn type) base emitter on voltage (pnp type) freewheel diode forward voltage (pnp type) switching time resistive load (npn type) switching time resistive load (pnp type) TIP122FP / tip127fp 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 3 3.2 0.118 0.126 l2 a b d e h g l6 ? f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data TIP122FP / tip127fp 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com TIP122FP / tip127fp 6/6
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